Self-assembly of Silicon Nanotubes

Self-Assembly of Carbon Nanotubes by Drop Drying Multicolor Photoluminescence from Porous Silicon Charge Transport in Polymer Nanotubes/Nanofibers Vesicular Fluorescence Sensors

Template-free inorganic synthesis of silica-based nanotubes and their self-assembly to mesocrystals

A novel synthesis approach for silica-based nanotubes (NTs) was discovered in the purely inorganic system containing the molecular compounds OP(NH2)3, SP(NH2)3 and SiCl4 in evacuated and sealed silica glass ampoules. Without any solvent or structure directing template the amorphous NTs self-organise to form orthogonally ordered, 3D hyperbranched mesocrystals, exhibiting an interesting material ...

Engineering hierarchical nanostructures by elastocapillary self-assembly.

Surfaces coated with nanoscale filaments such as silicon nanowires and carbon nanotubes are potentially compelling for high-performance battery and capacitor electrodes, photovoltaics, electrical interconnects, substrates for engineered cell growth, dry adhesives, and other smart materials. However, many of these applications require a wet environment or involve wet processing during their synt...

Synthesis of Locally-ordered Carbon Nanotube Arrays from Patterned Catalyst by Self-assembly Technique

Site-selective growth of multi-walled carbon nanotubes (MWCNTs) from an iron oxide nanoparticle catalyst patterned by drying-mediated self-assembly technique is present. The ethanol solution of the iron nitrate was employed as catalyst precursor. The catalyst precursor was mounted on silicon wafer by dip-coating. After evaporation of solvent at room temperature, the catalyst pattern formed. The...

Investigation of the Performance of Carbon Nanotube and Silicon Nanowire Junctionless Transistors using First–Principle Calculations

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...